* 6 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V, ID = 3 A
* Low Gate Charge (Typ. 30 nC)
* Low Crss (Typ. 11 pF)
* 100% Avalanche Tested
* RoHS Comp.

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switc.

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